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ultra low power/high speed cmos sram 512k x 16 bit bh616uv8011 r0201-bh616uv8011 revision 1.2 oct. 2008 1 pb-free and green package materials are compliant to rohs ? features y wide v cc low operation voltage : 1.65v ~ 3.6v y ultra low power consumption : v cc = 3.6v operation current : 12ma (max.) at 55ns 2ma (max.) at 1mhz standby current : 15ua (max.) at 3.0v/85 o c v cc = 1.2v data retention current : 7ua (max.) at 85 o c y high speed access time : -55/-70 55ns (max.) at v cc =3v 70ns (max.) at v cc =1.8v y automatic power down when chip is deselected y easy expansion with ce1, ce2 and oe options y i/o configuration x8/x16 selectable by lb and ub pin. y three state outputs and ttl compatible y fully static operation, no clock, no refresh y data retention supply voltage as low as 1.0v ? description the bh616uv8011 is a high performance, ultra low power cmos static random access memory organized as 524,288 by 16 bits and operates in a wide range of 1.65v to 3.6v supply voltage. advanced cmos technology and ci rcuit techniques provide both high speed and low power features with maximum standby current of 15ua at 3.6v at 85 o c and maximum access time of 55ns/70ns at 3v/1.8v . easy memory expansion is provided by an active low chip enable (ce1), an active high chip enable (ce2) and active low output enable (oe) and three-state output drivers. the bh616uv8011 has an automatic power down feature, reducing the power consumption significant ly when chip is deselected. the bh616uv8011 is available in dice form, jedec standard 48-pin tsop-i and 48-ball bga package. ? power consumption power dissipation standby (i ccsb1 , max) operating (i cc , max) v cc =3.6v v cc =1.8v product family operating temperature v cc =3.6v v cc =1.8v 1mhz 10mhz f max. 1mhz 10mhz f max. pkg type bh616uv8011di dice bh616uv8011ai bga-48-0608 bh616uv8011ti industrial -40 o c to +85 o c 15ua 12ua 2ma 6ma 12ma 1.5ma 5ma 8ma tsop i-48 ? pin configurations ? block diagram brilliance semiconductor, inc. reserves the right to change products and specifications without notice. detailed product characteristic test repor t is available upon request and being accepted. g h f e d c b a 1 2 3 4 5 6 a 9 a 11 a 10 nc a 12 a 14 a 13 a 15 we dq13 dq5 dq7 dq6 a 17 a 16 a 7 vss vcc dq12 dq11 dq4 dq3 nc a 5 oe a 3 a 0 a 6 a 4 a 1 a 2 ce2 ub dq10 dq1 ce1 dq2 dq0 48-ball bga top view lb dq8 dq9 vss vcc dq14 dq15 a 18 nc a 8 a15 a14 a13 a12 a11 a10 a9 a8 nc nc we ce2 nc ub lb a18 a17 a7 a6 a5 a4 a3 a2 a1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 bh616uv8011ti 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 a16 nc vss dq15 dq7 dq14 dq6 dq13 dq5 dq12 dq4 vcc dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 oe vss ce1 a0 address input buffer row decoder memory array 1024 x 8192 column i/o write driver sense am p column decoder address input buffer a15 a16 a2 a1 data input buffer control dq0 . . . . . . dq15 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 16 16 16 16 9 512 8192 1024 10 a18 data output buffer a13 ce2 ce1 we oe ub lb v cc v ss a0 . . . . . . a14 a17
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 2 ? pin descriptions name function a0-a18 address input these 19 address inputs select one of the 524,288 x 16 bit in the ram ce1 chip enable 1 input ce2 chip enable 2 input ce1 is active low and ce2 is active high . both chip enables must be active when data read from or write to the device. if eit her chip enable is not active, the device is deselected and is in standby power mode. the dq pins will be in the high impedance state when the device is deselected. we write enable input the write enable input is active low and cont rols read and write operations. with the chip selected, when we is high and oe is low, output data will be present on the dq pins; when we is low, the data present on the dq pins will be written into the selected memory location. oe output enable input the output enable input is active low. if the output enable is active while the chip is selected and the write enable is inactive, data will be present on the dq pins and they will be enabled. the dq pins will be in the high impendence state when oe is inactive. lb and ub data byte control input lower byte and upper byte data input/output control pins. dq0-dq15 data input/output ports 16 bi-directional ports are used to read data from or write data into the ram. v cc power supply v ss ground ? truth table mode ce1 ce2 we oe lb ub dq0~dq7 dq8~dq15 v cc current h x x x x x high z high z i ccsb , i ccsb1 x l x x x x high z high z i ccsb , i ccsb1 chip de-selected (power down) x x x x h h high z high z i ccsb , i ccsb1 l h h h l x high z high z i cc output disabled l h h h x l high z high z i cc l l d out d out i cc h l high z d out i cc read l h h l l h d out high z i cc l l d in d in i cc h l x d in i cc write l h l x l h d in x i cc notes: h means v ih ; l means v il ; x means don?t care (must be v ih or v il state)
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 3 ? absolute maximum ratings (1) symbol parameter rating units v term terminal voltage with respect to gnd -0.5 (2) to 4.6v v t bias temperature under bias -40 to +125 o c t stg storage temperature -60 to +150 o c p t power dissipation 1.0 w i out dc output current 20 ma 1. stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational secti ons of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. ?2.0v in case of ac pulse width less than 30 ns ? operating range rang ambient temperature v cc industrial -40 o c to + 85 o c 1.65v ~ 3.6v ? capacitance (1) (t a = 25 o c, f = 1.0mhz) symbol pamameter conditions max. units c in input capacitance v in = 0v 6 pf c io input/output capacitance v i/o = 0v 8 pf 1. this parameter is guaranteed and not 100% tested. ? dc electrical characteristics (t a = -40 o c to +85 o c) parameter name parameter test conditions min. typ. (1) max. units v cc power supply 1.65 -- 3.6 v v cc =1.8v 0.4 v il input low voltage v cc =3.6v -0.3 (2) -- 0.6 v v cc =1.8v 1.4 v ih input high voltage v cc =3.6v 2.2 -- v cc +0.3 (3) v i il input leakage current v in = 0v to v cc , ce1 = v ih or ce2 = v il -- -- 1 ua i lo output leakage current v i/o = 0v to v cc , ce1 = v ih or ce2 = v il or oe = v ih or ub = lb = v ih -- -- 1 ua v cc = max, i ol = 0.2ma v cc =1.8v 0.2 v ol output low voltage v cc = max, i ol = 2.0ma v cc =3.6v -- -- 0.4 v v cc = min, i oh = -0.1ma v cc =1.8v v cc -0.2 v oh output high voltage v cc = min, i oh = -1.0ma v cc =3.6v 2.4 -- -- v v cc =1.8v 6 8 i cc operating power supply current ce1 = v il and ce2 = v ih , i dq = 0ma, f = f max (4) v cc =3.6v -- 8 12 ma v cc =1.8v 1.0 1.5 i cc1 operating power supply current ce1 = v il and ce2 = v ih , i dq = 0ma, f = 1mhz v cc =3.6v -- 1.5 2.0 ma v cc =1.8v 0.5 i ccsb standby current ? ttl ce1 = v ih , or ce2 = v il , i dq = 0ma v cc =3.6v -- -- 1.0 ma v cc =1.8v 2.0 12 i ccsb1 standby current ? cmos ce1 R v cc -0.2v or ce2 Q 0.2v, v in R v cc -0.2v or v in Q 0.2v v cc =3.6v -- 2.5 (5) 15 ua 1. typical characteristics are at t a =25 o c and not 100% tested. 2. undershoot: -1.0v in case of pulse width less than 20 ns. 3. overshoot: v cc +1.0v in case of pulse width less than 20 ns. 4. f max =1/t rc. 5. v cc =3.0v
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 4 ? data retention characteristics (t a = -40 o c to +85 o c) symbol parameter test conditions min. typ. (1) max. units v dr v cc for data retention ce1 R v cc -0.2v or ce2 Q 0.2v, v in R v cc -0.2v or v in Q 0.2v 1.0 -- -- v i ccdr data retention current ce1 R v cc -0.2v or ce2 Q 0.2v, v in R v cc -0.2v or v in Q 0.2v v cc =1.2v -- 1.2 7.0 ua t cdr chip deselect to data retention time 0 -- -- ns t r operation recovery time see retention waveform t rc (2) -- -- ns 1. typical characteristics are at t a =25 o c and not 100% tested. 2. t rc = read cycle time. ? low v cc data retention waveform (1) (ce1 controlled) ? low v cc data retention waveform (2) (ce2 controlled) ? ac test conditions (test load and input/output reference) input pulse levels v cc / 0v input rise and fall times 1v/ns input and output timing reference level 0.5vcc t clz1 , t clz2 , t be , t olz , t chz1 , t chz2 , t bdo , t ohz , t whz , t ow c l = 5pf+1ttl output load others c l = 30pf+1ttl 1. including jig and scope capacitance. ? key to switching waveforms waveform inputs outputs must be steady must be steady may change from ?h? to ?l? will be change from ?h? to ?l? may change from ?l? to ?h? will be change from ?l? to ?h? don?t care any change permitted change : state unknow does not apply center line is high inpedance ?off? state c l (1) 1 ttl output all input pulses 90% v cc gnd rise time: 1v/ns fall time: 1v/ns 90% R v cc - 0.2v v dr R 1.0v ce1 v cc ce2 data retention mode v cc t cdr v cc t r v il v il v cc v dr R 1.0v ce2 Q 0.2v
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 5 ? ac electrical characteristics (t a = -40 o c to +85 o c) read cycle cycle time : 55ns (vcc=3.0v) cycle time : 70ns (vcc=1.8v) jedec parameter name paraneter name description min. typ. max. min. typ. max. units t avax t rc read cycle time 55 -- -- 70 -- -- ns t av q x t aa address access time -- -- 55 -- -- 70 ns t e1lqv t acs1 chip select access time (ce1) -- -- 55 -- -- 70 ns t e2lqv t acs2 chip select access time (ce2) -- -- 55 -- -- 70 ns t blqv t ba data byte control access time (lb, ub) -- -- 55 -- -- 70 ns t glqv t oe output enable to output valid -- -- 30 -- -- 35 ns t e1lqx t clz1 chip select to output low z (ce1) 10 -- -- 10 -- -- ns t e2lqx t clz2 chip select to output low z (ce2) 10 -- -- 10 -- -- ns t blqx t be data byte control to output low z (lb, ub) 10 -- -- 10 -- -- ns t glqx t olz output enable to output low z 5 -- -- 5 -- -- ns t e1hqz t chz1 chip select to output high z (ce1) -- -- 25 -- -- 30 ns t e2hqz t chz2 chip select to output high z (ce2) -- -- 25 -- -- 30 ns t bhqz t bdo data byte control to output high z (lb, ub) -- -- 25 -- -- 30 ns t ghqz t ohz output enable to output high z -- -- 25 -- -- 30 ns t av q x t oh data hold from address change 10 -- -- 10 -- -- ns ? switching waveforms (read cycle) read cycle 1 (1,2,4) t rc t oh t aa d out address t oh
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 6 read cycle 2 (1,3,4) read cycle 3 (1, 4) notes: 1. we is high in read cycle. 2. device is continuously selected when ce1 = v il and ce2= v ih . 3. address valid prior to or coincident with ce1 transition low and/or ce2 transition high. 4. oe = v il . 5. transition is measured 500mv from steady state with c l = 5pf. the parameter is guaranteed but not 100% tested. t oh t rc t oe t be t bdo d out ce1 oe address t clz1 (5) t a cs1 t chz (1 , 5) t ohz (5) t olz t aa lb, ub t b a t clz2 (5) t chz2 (2 , 5) ce2 t acs2 t clz (5 , 6) d out ce2 ce1 t a cs2 (6) t a cs1 t chz (5 , 6)
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 7 ? ac electrical characteristics (t a = -40 o c to +85 o c) write cycle cycle time : 55ns (vcc=3.0v) cycle time : 70ns (vcc=1.8v) jedec parameter name paraneter name description min. typ. max. min. typ. max. units t avax t wc write cycle time 55 -- -- 70 -- -- ns t av w l t as address set up time 0 -- -- 0 -- -- ns t av w h t aw address valid to end of write 45 -- -- 60 -- -- ns t elwh t cw chip select to end of write 45 -- -- 60 -- -- ns t blwh t bw data byte control to end of write (lb, ub) 45 -- -- 60 -- -- ns t wlwh t wp write pulse width 35 -- -- 35 -- -- ns t whax t wr1 write recovery time (ce1, we) 0 -- -- 0 -- -- ns t e2lax t wr2 write recovery time (ce2) 0 -- -- 0 -- -- ns t wlqz t whz write to output high z -- -- 20 -- -- 25 ns t dvwh t dw data to write time overlap 25 -- -- 30 -- -- ns t whdx t dh data hold from write time 0 -- -- 0 -- -- ns t ghqz t ohz output disable to output in high z -- -- 25 -- -- 30 ns t whqx t ow end of write to output active 5 -- -- 5 -- -- ns ? switching waveforms (write cycle) write cycle 1 (1) t wc t wr1 (3) t cw (11) t wp (2) t aw t ohz (4 , 10) t a s t wr2 (3) t dh t dw d in d out we lb, ub ce1 oe address (5) t bw t cw (11) ce2 (5)
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 8 write cycle 2 (1,6) notes: 1. we must be high during address transitions. 2. the internal write time of the memory is defined by the overlap of ce1 and ce2 active and we low. all signals must be active to initiate a write and any one signal can terminate a write by going inactive. the data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. t wr is measured from the earlier of ce1 or we going high or ce2 going low at the end of write cycle. 4. during this period, dq pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. if the ce1 low transition or the ce2 high tr ansition occurs simultaneously with the we low transitions or after the we transition, output remain in a high impedance state. 6. oe is continuously low (oe = v il ). 7. d out is the same phase of write data of this write cycle. 8. d out is the read data of next address. 9. if ce1 is low and ce2 is high during this period, dq pins are in the output state. then the data input signals of opposite phase to the outputs must not be applied to them. 10. transition is measured 500mv from steady state with c l = 5pf. the parameter is guaranteed but not 100% tested. 11. t cw is measured from the later of ce1 going low or ce2 going high to the end of write. t wc t cw (11) t wp (2) t aw t whz (4 , 10) t as t wr (3) t dh t dw d in d out we lb, ub ce1 address (5) t ow (7) (8) (8 , 9) t bw ( 12 ) t cw (11) ce2 (5)
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 9 ? ordering information note: brilliance semiconductor inc. (bsi) assumes no responsibility for the application or use of any product or circuit described he rein. bsi does not authorize its products for use as critical components in any application in which the failure of the bsi product may be exp ected to result in significant injury or death, including life- support systems and critical medical instruments. ? package dimensions package a: bga-48-0608 t: tsop i-48 bh616uv8011 x x z y y grade i: -40 o c ~ +85 o c speed -55: 55ns -70: 70ns pkg material g: green, rohs compliant p: pb free, rohs compliant 48 mini-bga (6 x 8) d1 view a 1.2 max. e e1 1: controlling dimensio ns are in millimeters. 2: pin#1 dot marking by laser or pad print. 3: symbol "n" is the number of solder balls. ball pitch e = 0.75 d 8.0 6.0 e n 48 3.75 e1 d1 5.25 notes:
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 10 ? package dimensions tsop i-48 pin (12mm x 20mm)
bh616u v 8011 r0201-bh616uv8011 revision 1.2 oct. 2008 11 ? revision history revision no. history draft date remark 1.0 initial production version may 10,2006 initial 1.1 change i-grade operation temperature range may. 25, 2006 - from ?25 o c to ?40 o c 1.2 change -55 55ns(max.) at v cc =1.65~3.6v to oct. 31, 2008 55ns(max.) at v cc =3v, and 70ns(max.) at v cc =1.8v typical value of standby current is replaced by maximum value in featues and description section remove ?-: normal? (leaded) pkg material in ordering information add in tsop1-48 package

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